Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
Author(s)
Aminbeidokhti, Amirhossein
Dimitrijev, Sima
Hanumanthappa, Anil Kumar
Moghadam, Hamid Amini
Haasmann, Daniel
Han, Jisheng
Shen, Yan
Xu, Xiangang
Year published
2016
Metadata
Show full item recordAbstract
The mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is ...
View more >The mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
View less >
View more >The mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
View less >
Journal Title
IEEE Transactions on Electron Devices
Volume
63
Issue
3
Subject
Electrical engineering
Electronics, sensors and digital hardware