dc.contributor.author | Aminbeidokhti, Amirhossein | |
dc.contributor.author | Dimitrijev, Sima | |
dc.contributor.author | Hanumanthappa, Anil Kumar | |
dc.contributor.author | Moghadam, Hamid Amini | |
dc.contributor.author | Haasmann, Daniel | |
dc.contributor.author | Han, Jisheng | |
dc.contributor.author | Shen, Yan | |
dc.contributor.author | Xu, Xiangang | |
dc.date.accessioned | 2018-01-23T04:29:57Z | |
dc.date.available | 2018-01-23T04:29:57Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.doi | 10.1109/TED.2016.2519533 | |
dc.identifier.uri | http://hdl.handle.net/10072/100024 | |
dc.description.abstract | The mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45). | |
dc.description.peerreviewed | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation.ispartofpagefrom | 1013 | |
dc.relation.ispartofpageto | 1019 | |
dc.relation.ispartofissue | 3 | |
dc.relation.ispartofjournal | IEEE Transactions on Electron Devices | |
dc.relation.ispartofvolume | 63 | |
dc.subject.fieldofresearch | Electrical engineering | |
dc.subject.fieldofresearch | Electronics, sensors and digital hardware | |
dc.subject.fieldofresearchcode | 4008 | |
dc.subject.fieldofresearchcode | 4009 | |
dc.title | Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.hasfulltext | No Full Text | |
gro.griffith.author | Dimitrijev, Sima | |
gro.griffith.author | Haasmann, Daniel E. | |