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dc.contributor.authorAminbeidokhti, Amirhossein
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorHanumanthappa, Anil Kumar
dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorHaasmann, Daniel
dc.contributor.authorHan, Jisheng
dc.contributor.authorShen, Yan
dc.contributor.authorXu, Xiangang
dc.date.accessioned2018-01-23T04:29:57Z
dc.date.available2018-01-23T04:29:57Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.doi10.1109/TED.2016.2519533
dc.identifier.urihttp://hdl.handle.net/10072/100024
dc.description.abstractThe mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofpagefrom1013
dc.relation.ispartofpageto1019
dc.relation.ispartofissue3
dc.relation.ispartofjournalIEEE Transactions on Electron Devices
dc.relation.ispartofvolume63
dc.subject.fieldofresearchElectrical engineering
dc.subject.fieldofresearchElectronics, sensors and digital hardware
dc.subject.fieldofresearchcode4008
dc.subject.fieldofresearchcode4009
dc.titleGate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHaasmann, Daniel E.


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