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dc.contributor.authorQamar, Afzaal
dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorDzung, Viet Dao
dc.contributor.authorTanner, Philip
dc.contributor.authorToan, Dinh
dc.contributor.authorWang, Li
dc.contributor.authorDimitrijev, Sima
dc.date.accessioned2018-07-04T00:49:21Z
dc.date.available2018-07-04T00:49:21Z
dc.date.issued2015
dc.identifier.issn0741-3106
dc.identifier.doi10.1109/LED.2015.2435153
dc.identifier.urihttp://hdl.handle.net/10072/100165
dc.description.abstractThis letter reports for the first time the strain dependence of the offset voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the offset voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the offset voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofpagefrom708
dc.relation.ispartofpageto710
dc.relation.ispartofissue7
dc.relation.ispartofjournalIEEE Electron Device Letters
dc.relation.ispartofvolume36
dc.subject.fieldofresearchElectronics, sensors and digital hardware
dc.subject.fieldofresearchcode4009
dc.titleThe Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorTanner, Philip G.
gro.griffith.authorDao, Dzung V.


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