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dc.contributor.authorQamar, Afzaal
dc.contributor.authorDao, Dzung
dc.contributor.authorPhan, Hoang Phuong
dc.contributor.authorDinh, Toan
dc.contributor.authorDimitrijev, Sima
dc.date.accessioned2018-07-23T03:41:09Z
dc.date.available2018-07-23T03:41:09Z
dc.date.issued2016
dc.identifier.issn1077-3118en_US
dc.identifier.doi10.1063/1.4962048en_US
dc.identifier.urihttp://hdl.handle.net/10072/100384
dc.description.abstractPiezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P12=(5.3±0.4)×10−11 Pa−1,P11=(−2.6±0.6)×10−11 Pa−1, and P44=(11.42±0.6)×10−11 Pa−1. Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.en_US
dc.description.peerreviewedYesen_US
dc.languageEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofpagefrom092903-1en_US
dc.relation.ispartofpageto092903-4en_US
dc.relation.ispartofissue9en_US
dc.relation.ispartofjournalApplied Physics Lettersen_US
dc.relation.ispartofvolume109en_US
dc.subject.fieldofresearchEngineering not elsewhere classifieden_US
dc.subject.fieldofresearchcode099999en_US
dc.titleFundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientationen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
dc.description.versionPost-printen_US
gro.facultyGriffith Sciences, Griffith School of Engineeringen_US
gro.rights.copyright© 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Vol 109(9) p.p. 092903-1-093903-4, 2016 and may be found at https://doi.org/10.1063/1.4962048.en_US
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