Active-matrix GaN micro light-emitting diode display with unprecedented brightness
Author(s)
Herrnsdorf, J
McKendry, JJD
Zhang, S
Xie, E
Ferreira, R
Massoubre, D
Zuhdi, AM
Henderson, RK
Underwood, I
Watson, S
Kelly, AE
Gu, E
Dawson, MD
Griffith University Author(s)
Year published
2015
Metadata
Show full item recordAbstract
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.
View less >
View less >
Journal Title
IEEE Transactions on Electron Devices
Volume
62
Issue
6
Subject
Electrical and Electronic Engineering not elsewhere classified
Electrical and Electronic Engineering