dc.contributor.author | Hoang-Phuong, Phan | |
dc.contributor.author | Dinh, Toan | |
dc.contributor.author | Kozeki, Takahiro | |
dc.contributor.author | Qamar, Afzaal | |
dc.contributor.author | Namazu, Takahiro | |
dc.contributor.author | Dimitrijev, Sima | |
dc.contributor.author | Nam-Trung, Nguyen | |
dc.contributor.author | Dzung, Viet Dao | |
dc.date.accessioned | 2017-07-26T01:43:06Z | |
dc.date.available | 2017-07-26T01:43:06Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 2045-2322 | |
dc.identifier.doi | 10.1038/srep28499 | |
dc.identifier.uri | http://hdl.handle.net/10072/100667 | |
dc.description.abstract | Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. | |
dc.description.peerreviewed | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Nature Macmillan | |
dc.relation.ispartofpagefrom | 28499-1 | |
dc.relation.ispartofpageto | 28499-9 | |
dc.relation.ispartofjournal | Scientific Reports | |
dc.relation.ispartofvolume | 6 | |
dc.subject.fieldofresearch | Macromolecular and materials chemistry not elsewhere classified | |
dc.subject.fieldofresearchcode | 340399 | |
dc.title | Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
dcterms.license | http://creativecommons.org/licenses/by/4.0/ | |
dc.description.version | Version of Record (VoR) | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.rights.copyright | © The Author(s) 2016. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | |
gro.hasfulltext | Full Text | |
gro.griffith.author | Dimitrijev, Sima | |
gro.griffith.author | Dao, Dzung V. | |
gro.griffith.author | Nguyen, Nam-Trung | |