Photo-induced excitonic spin dynamics in GaAs
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The dynamics of the optical orientated excitonic spins in semiconductor quantum wells has been investigated using opposite circular polarizations of the photoluminescence (PL) caused by the spin-dependent phase-space filling. The PL excitonic spin polarization estimated from the two different polarization conditions is found to strongly depend on the strength of the electric bias as well as on the size of the wells. With an increase of the electric bias field, the excitonic PL spin polarization increases, giving a maximum value of ∼ 90 % at the fields higher than ∼ 2.5 V. However, the PL spin polarization decreases with increasing the size of the well as well as increasing crystal temperature. The results as well as possible reasons responsible for the effects are discussed.
Optical and Quantum Electronics
© 2015 Springer Science+Business Media New York. This is an electronic version of an article published in Optical and Quantum Electronics, Vol. 47(5), 2015, pp. 1239–1244. Optical and Quantum Electronics is available online at: http://link.springer.com/ with the open URL of your article.
Optical Physics not elsewhere classified