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  • Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

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    Accepted Manuscript (AM)
    Author(s)
    Hoang-Phuong, Phan
    Kozeki, Takahiro
    Dinh, Toan
    Fujii, Tatsuya
    Qamar, Afzaal
    Zhu, Yong
    Namazu, Takahiro
    Nam-Trung, Nguyen
    Dao, Dzung Viet
    Griffith University Author(s)
    Zhu, Yong
    Dao, Dzung V.
    Nguyen, Nam-Trung
    Year published
    2015
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    Abstract
    The piezoresistive effect in silicon nanowires (SiNWs) has attracted a great deal of interest for NEMS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron beam lithography (EBL). Focused ion beam (FIB), on the other hand, is more compatible with CMOS integration than the bottom up method, and is simpler and more capable of fabricating very narrow Si nanostructures compared to EBL and photolithography. Taking the advantages of FIB, this paper presents for the first time the piezoresistive effect of p-type SiNWs fabricated using ...
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    The piezoresistive effect in silicon nanowires (SiNWs) has attracted a great deal of interest for NEMS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron beam lithography (EBL). Focused ion beam (FIB), on the other hand, is more compatible with CMOS integration than the bottom up method, and is simpler and more capable of fabricating very narrow Si nanostructures compared to EBL and photolithography. Taking the advantages of FIB, this paper presents for the first time the piezoresistive effect of p-type SiNWs fabricated using focused ion beam implantation and wet etching. The SiNWs were locally amorphized by Ga+ ion implantation, selectively wet-etched, and thermally annealed at 700 °C. A relatively large gauge factor of approximately 47 was found in the annealed SiNWs, indicating the potential of using the piezoresistive effect in top-down fabricated SiNWs for developing NEMS sensors.
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    Journal Title
    RSC Advances
    Volume
    5
    Issue
    100
    DOI
    https://doi.org/10.1039/c5ra13425k
    Copyright Statement
    © 2014 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
    Subject
    Chemical sciences
    Microelectronics
    Microelectromechanical systems (MEMS)
    Publication URI
    http://hdl.handle.net/10072/101525
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    • Journal articles

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