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dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorKozeki, Takahiro
dc.contributor.authorDinh, Toan
dc.contributor.authorFujii, Tatsuya
dc.contributor.authorQamar, Afzaal
dc.contributor.authorZhu, Yong
dc.contributor.authorNamazu, Takahiro
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorDao, Dzung Viet
dc.date.accessioned2018-07-23T04:14:07Z
dc.date.available2018-07-23T04:14:07Z
dc.date.issued2015
dc.identifier.issn2046-2069
dc.identifier.doi10.1039/c5ra13425k
dc.identifier.urihttp://hdl.handle.net/10072/101525
dc.description.abstractThe piezoresistive effect in silicon nanowires (SiNWs) has attracted a great deal of interest for NEMS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron beam lithography (EBL). Focused ion beam (FIB), on the other hand, is more compatible with CMOS integration than the bottom up method, and is simpler and more capable of fabricating very narrow Si nanostructures compared to EBL and photolithography. Taking the advantages of FIB, this paper presents for the first time the piezoresistive effect of p-type SiNWs fabricated using focused ion beam implantation and wet etching. The SiNWs were locally amorphized by Ga+ ion implantation, selectively wet-etched, and thermally annealed at 700 °C. A relatively large gauge factor of approximately 47 was found in the annealed SiNWs, indicating the potential of using the piezoresistive effect in top-down fabricated SiNWs for developing NEMS sensors.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherRoyal Society of Chemistry
dc.relation.ispartofpagefrom82121
dc.relation.ispartofpageto82126
dc.relation.ispartofissue100
dc.relation.ispartofjournalRSC Advances
dc.relation.ispartofvolume5
dc.subject.fieldofresearchChemical sciences
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchMicroelectromechanical systems (MEMS)
dc.subject.fieldofresearchcode34
dc.subject.fieldofresearchcode400908
dc.subject.fieldofresearchcode401705
dc.titlePiezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionAccepted Manuscript (AM)
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2014 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorZhu, Yong
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung


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