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dc.contributor.authorMustary, Mumta Hena
dc.contributor.authorRyu, Beo Deul
dc.contributor.authorHan, Min
dc.contributor.authorYang, Jong Han
dc.contributor.authorLysak, Volodymyr V.
dc.contributor.authorHong, Chang-Hee
dc.description.abstractLight enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.en_US
dc.publisherKorean Institute of Electrical Engineersen_US
dc.relation.ispartofjournalJournal of Semiconductor Technology and Scienceen_US
dc.subject.fieldofresearchElectrical and Electronic Engineering not elsewhere classifieden_US
dc.titleNi-assisted fabrication of GaN based surface nano-textured light emitting diodes for improved light output poweren_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyGriffith Sciences, School of Natural Sciencesen_US
gro.hasfulltextNo Full Text
gro.griffith.authorMustary, Mumta Hena H.

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