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dc.contributor.authorRanjbar Kermany, Atieh
dc.contributor.authorIacopi, Francesca
dc.date.accessioned2017-05-03T12:39:35Z
dc.date.available2017-05-03T12:39:35Z
dc.date.issued2015
dc.identifier.issn1089-7550
dc.identifier.doi10.1063/1.4934188
dc.identifier.urihttp://hdl.handle.net/10072/101616
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherAmerican Institute of Physics
dc.relation.ispartofpagefrom155304-1
dc.relation.ispartofpageto155304-5
dc.relation.ispartofjournalJournal of Applied Physics
dc.relation.ispartofvolume118
dc.subject.fieldofresearchPhysical Sciences not elsewhere classified
dc.subject.fieldofresearchMathematical Sciences
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode029999
dc.subject.fieldofresearchcode01
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.titleControlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionPost-print
gro.rights.copyright© 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 118, 155304–1 – 155304–5 and may be found at http://doi.org/10.1063/1.4934188.
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gro.griffith.authorIacopi, Francesca
gro.griffith.authorRanjbar Kermany, Atieh


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