Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices
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This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. The impact of crystal orientation and the direction of strain on this effect has been presented. A single crystal p-type 3C-SiC(111) was grown by low pressure chemical vapor deposition and four-terminal devices were fabricated using conventional photolithography and dry etching processes. It has been observed that the pseudo-Hall effect in p-type 3C-SiC(111) is the same in  and [11[2 with combining macron]] crystal orientations and is smaller than the pseudo-Hall effect of 3C-SiC(100) four-terminal devices due to the defects associated with the growth of 3C-SiC(111).
Journal of Materials Chemistry C
© 2015 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
Macromolecular and Materials Chemistry not elsewhere classified