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dc.contributor.authorChai, Jessica
dc.contributor.authorWalker, Glenn
dc.contributor.authorWang, Li
dc.contributor.authorMassoubre, David
dc.contributor.authorTan, Say Hwa
dc.contributor.authorChaik, Kien
dc.contributor.authorHold, Leonie
dc.contributor.authorIacopi, Alan
dc.date.accessioned2018-08-02T22:00:29Z
dc.date.available2018-08-02T22:00:29Z
dc.date.issued2015
dc.identifier.issn2045-2322
dc.identifier.doi10.1038/srep17811
dc.identifier.urihttp://hdl.handle.net/10072/101753
dc.description.abstractUsing a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherNature Publishing Group
dc.relation.ispartofpagefrom17811-1
dc.relation.ispartofpageto17811-10
dc.relation.ispartofjournalScientific Reports
dc.relation.ispartofvolume5
dc.subject.fieldofresearchOther physical sciences not elsewhere classified
dc.subject.fieldofresearchcode519999
dc.titleSilicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.description.versionVersion of Record (VoR)
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.rights.copyright© The Author(s) 2015. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
gro.hasfulltextFull Text
gro.griffith.authorTan, Say Hwa H.


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