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dc.contributor.authorMassoubre, David
dc.contributor.authorWang, Li
dc.contributor.authorHold, Leonie
dc.contributor.authorFernandes, Alanna
dc.contributor.authorChai, Jessica
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorLacopi, Alan
dc.date.accessioned2017-05-25T05:14:51Z
dc.date.available2017-05-25T05:14:51Z
dc.date.issued2015
dc.identifier.issn2045-2322
dc.identifier.doi10.1038/srep17026
dc.identifier.urihttp://hdl.handle.net/10072/101759
dc.description.abstractSingle-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherNature Macmillan
dc.relation.ispartofpagefrom17026-1
dc.relation.ispartofpageto17026-8
dc.relation.ispartofjournalScientific Reports
dc.relation.ispartofvolume5
dc.subject.fieldofresearchMaterials engineering not elsewhere classified
dc.subject.fieldofresearchcode401699
dc.titleVertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.description.versionVersion of Record (VoR)
gro.facultyGriffith Sciences, School of Natural Sciences
gro.rights.copyright© The Author(s) 2015. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima


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