Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure

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Author(s)
Pan, Yue
Collins, Aaron M
Algahtani, Fahid
Leech, Patrick W
Reeves, Geoffrey K
Tanner, Philip
Holland, Anthony S
Griffith University Author(s)
Year published
2013
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Abstract
Low resistance contracts to highly doped silicon carbide (SiC) are investigated. Using a novel test structure that is easy to fabricate and easy to use, this paper demonstrates how it is used to reliably determine relatively low specific contact resistivities which vary with heat treatment. The test structure requires no error correction and is not affected by parasitic resistances. Using the test structure, small changes in specific contact resistivity are determined for small temperature changes. Results will be presented and discussed on the application of this novel test structure for nickel to highly doped SiC. 頨2013) ...
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Conference Title
MICRO/NANO MATERIALS, DEVICES, AND SYSTEMS
Volume
8923
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Copyright Statement
© The Author(s) 2013. The attached file is reproduced here in accordance with the copyright policy of the publisher. For information about this conference please refer to the conference’s website or contact the authors.
Subject
Biomedical Instrumentation
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