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  • High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

    Author(s)
    YAO, ZQ
    HARRISON, HB
    DIMITRIJEV, S
    SWEATMAN, D
    YEOW, YT
    Griffith University Author(s)
    Harrison, Barry B.
    Dimitrijev, Sima
    Sweatman, Denis R.
    Yao, Ze-Qiang
    Year published
    1994
    Metadata
    Show full item record
    Abstract
    High quality ultrathin silicon oxynitride films (3.5 nm) have been grown in a nitric oxide ambient using rapid thermal processing. The physical and electrical properties of these films are compared with those formed in a nitrous oxide environment. X‐ray photoelectron spectroscopy (XPS) results show that the nitric oxide (NO) grown films have a significantly different nitrogen distribution compared to the nitrious oxide (N2O) grown films. The capacitance‐voltage and current‐voltage characteristics of the NO grown and NO‐modified films are, in general, better than those of the same thickness grown in either N2O or O2.High quality ultrathin silicon oxynitride films (3.5 nm) have been grown in a nitric oxide ambient using rapid thermal processing. The physical and electrical properties of these films are compared with those formed in a nitrous oxide environment. X‐ray photoelectron spectroscopy (XPS) results show that the nitric oxide (NO) grown films have a significantly different nitrogen distribution compared to the nitrious oxide (N2O) grown films. The capacitance‐voltage and current‐voltage characteristics of the NO grown and NO‐modified films are, in general, better than those of the same thickness grown in either N2O or O2.
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    Journal Title
    Applied Physics Letters
    Volume
    64
    Issue
    26
    DOI
    https://doi.org/10.1063/1.111205
    Subject
    Physical sciences
    Agricultural, veterinary and food sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/118298
    Collection
    • Journal articles

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