dc.contributor.author | TANNER, P | |
dc.contributor.author | DIMITRIJEV, S | |
dc.contributor.author | HARRISON, HB | |
dc.date.accessioned | 2019-12-10T05:58:25Z | |
dc.date.available | 2019-12-10T05:58:25Z | |
dc.date.issued | 1995 | |
dc.identifier.issn | 0013-5194 | |
dc.identifier.uri | http://hdl.handle.net/10072/120209 | |
dc.description.abstract | A new experimental technique presented in the Letter simultaneously extracts the trap response time as well as trap density and energy in the silicon bandgap. The technique is illustrated by measuring the trap density increase in a MOS capacitor due to constant current stressing and is compared with the results obtained using the conventional quasistatic C/V technique. | |
dc.description.peerreviewed | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | IEE | |
dc.publisher.place | UK | |
dc.relation.ispartofpagefrom | 1880 | |
dc.relation.ispartofpageto | 1881 | |
dc.relation.ispartofissue | 21 | |
dc.relation.ispartofjournal | Electronics Letters | |
dc.relation.ispartofvolume | 31 | |
dc.subject.fieldofresearch | Biological sciences | |
dc.subject.fieldofresearch | Communications engineering | |
dc.subject.fieldofresearch | Electronics, sensors and digital hardware | |
dc.subject.fieldofresearchcode | 31 | |
dc.subject.fieldofresearchcode | 4006 | |
dc.subject.fieldofresearchcode | 4009 | |
dc.title | Technique for Monitoring Slow Interface Trap Characteristics in MOS Capacitors | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.hasfulltext | No Full Text | |
gro.griffith.author | Harrison, Barry B. | |
gro.griffith.author | Dimitrijev, Sima | |
gro.griffith.author | Tanner, Philip G. | |