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dc.contributor.authorDimitrijev, S
dc.contributor.authorHarrison, HB
dc.date.accessioned2019-12-10T05:49:58Z
dc.date.available2019-12-10T05:49:58Z
dc.date.issued1996
dc.identifier.issn0021-8979
dc.identifier.doi10.1063/1.363050
dc.identifier.urihttp://hdl.handle.net/10072/120678
dc.description.abstractThis article analyses the validity of the widely used semi‐empirical oxidation models based on the Deal‐Grove formulation in the light of recent advances in the understanding of the oxidation process. An extension of the Deal‐Grove formulation is suggested to account for the newest experimental results. The introduced extension incorporates the effect of accelerated initial growth into the theoretical oxidation growth model. There is a direct relationship between the newly‐derived theoretical term for the initial growth rate and its widely‐used empirical counterpart.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherAmerican Institute of Physics
dc.publisher.placeUSA
dc.relation.ispartofpagefrom2467
dc.relation.ispartofpageto2470
dc.relation.ispartofissue4
dc.relation.ispartofjournalJournal of Applied Physics
dc.relation.ispartofvolume80
dc.subject.fieldofresearchForestry Biomass and Bioproducts
dc.subject.fieldofresearchMathematical Sciences
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode070502
dc.subject.fieldofresearchcode01
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.titleModelling the Growth of Thin Silicon Oxide Films on Silicon
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima


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