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dc.contributor.authorDimitrijev, S
dc.contributor.authorTanner, P
dc.contributor.authorYao, ZQ
dc.contributor.authorHarrison, HB
dc.date.accessioned2020-01-03T04:54:34Z
dc.date.available2020-01-03T04:54:34Z
dc.date.issued1997
dc.identifier.issn0026-2714
dc.identifier.doi10.1016/S0026-2714(96)00276-4
dc.identifier.urihttp://hdl.handle.net/10072/121483
dc.description.abstractSlow current transients in metal-oxide-semiconductor (MOS) capacitors have been observed and related to slow states located in the oxide within tunneling distance of the silicon. This paper describes slow-state related current transients induced by voltage stepping as the basis of the recently developed technique for both energy-level and time-response characterization of the slow states. The voltage stepping measurements are compared to the standard linear voltage ramping technique.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherPergamon
dc.publisher.placeUK
dc.relation.ispartofpagefrom1143
dc.relation.ispartofpageto1146
dc.relation.ispartofissue7
dc.relation.ispartofjournalMicroelectronics Reliability
dc.relation.ispartofvolume37
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchcode0906
dc.titleSlow State Characterization by Measurements of Current-voltage Characteristics of MOS Capacitors
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorTanner, Philip G.


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