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dc.contributor.authorLi, HF
dc.contributor.authorDimitrijev, S
dc.contributor.authorHarrison, HB
dc.contributor.authorSweatman, D
dc.date.accessioned2018-11-09T12:32:03Z
dc.date.available2018-11-09T12:32:03Z
dc.date.issued1997
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10072/121484
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherAmerican Institute of Physics
dc.publisher.placeUSA
dc.relation.ispartofpagefrom2028
dc.relation.ispartofpageto2030
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume70/15
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchcode09
dc.subject.fieldofresearchcode02
dc.titleInterfacial Characteristics of N2O and NO Nitrited SiO2 Grown on SiC by Rapid Thermal Processing
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyAn Unassigned Group, An Unassigned Department
gro.hasfulltextNo Full Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorSweatman, Denis R.
gro.griffith.authorLi, Hui-feng


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