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dc.contributor.authorLi, Hui-fengen_US
dc.contributor.authorDimitrijev, Simaen_US
dc.contributor.authorHarrison, Barryen_US
dc.contributor.authorSweatman, Denisen_US
dc.date.accessioned2018-11-09T12:32:03Z
dc.date.available2018-11-09T12:32:03Z
dc.date.issued1997en_US
dc.identifier.issn00036951en_US
dc.identifier.urihttp://hdl.handle.net/10072/121484
dc.description.peerreviewedYesen_US
dc.languageEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.publisher.placeUSAen_US
dc.relation.ispartofpagefrom2028en_US
dc.relation.ispartofpageto2030en_US
dc.relation.ispartofjournalApplied Physics Lettersen_US
dc.relation.ispartofvolume70/15en_US
dc.titleInterfacial Characteristics of N2O and NO Nitrited SiO2 Grown on SiC by Rapid Thermal Processingen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyAn Unassigned Group, An Unassigned Departmenten_US
gro.hasfulltextNo Full Text


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