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dc.contributor.authorLi, HF
dc.contributor.authorDimitrijev, S
dc.contributor.authorHarrison, HB
dc.contributor.authorSweatman, D
dc.date.accessioned2020-01-03T04:48:43Z
dc.date.available2020-01-03T04:48:43Z
dc.date.issued1997
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.118773
dc.identifier.urihttp://hdl.handle.net/10072/121484
dc.description.abstractInterfacial characteristics of Al/SiO2/n-type 6H-SiC metal-oxide-semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type 6H-SiC interface with interface state density in the order of 1010-1011 eV-1 cm-2. NO annealing improves the SiO2/n-type 6H-SiC interface, while N2O annealing increases the interface state density.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherAmerican Institute of Physics
dc.publisher.placeUSA
dc.relation.ispartofpagefrom2028
dc.relation.ispartofpageto2030
dc.relation.ispartofissue15
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume70
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchcode09
dc.subject.fieldofresearchcode02
dc.titleInterfacial Characteristics of N2O and NO Nitrited SiO2 Grown on SiC by Rapid Thermal Processing
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorSweatman, Denis R.
gro.griffith.authorLi, Hui-feng


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