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dc.contributor.authorRosa, MA
dc.contributor.authorDimitrijev, S
dc.contributor.authorHarrison, HB
dc.date.accessioned2020-01-03T04:51:18Z
dc.date.available2020-01-03T04:51:18Z
dc.date.issued1999
dc.identifier.issn0026-2714
dc.identifier.doi10.1016/S0026-2714(98)00195-4
dc.identifier.urihttp://hdl.handle.net/10072/122941
dc.description.abstractThis paper presents a new technique which has been successfully applied to the fabrication of micromachined components to avoid the ‘device stiction’ often encountered during the final processing steps of micro-fabrication. Based on the use of BESOI substrates, this technique involves the heavy boron doping of the final processed structure, followed by a timed wet etch which releases the micromachined device by controllably lowering the undoped Si substrate beneath it.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherPergamon
dc.publisher.placeUK
dc.relation.ispartofpagefrom139
dc.relation.ispartofpageto142
dc.relation.ispartofissue1
dc.relation.ispartofjournalMicroelectronics Reliability
dc.relation.ispartofvolume39
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchcode0906
dc.titleAvoidance of Stiction in the Release of Highly Boron Doped Micro-actuators Fabricated using BESOI Substrates
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorRosa, Michel A.


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