Influence of gallium ion beam acceleration voltage on the bend angle of amorphous silicon cantilevers
Author(s)
Kozeki, Takahiro
Hoang-Phuong, Phan
Dzung, Viet Dao
Inoue, Shozo
Namazu, Takahiro
Griffith University Author(s)
Year published
2016
Metadata
Show full item recordAbstract
This paper describes a plastic reshaping technique for Si thin membranes by using focused ion beam (FIB) processing. FIB is used to locally pattern and implant Ga ions into the membranes. The combination of Ga ion doping and alkali wet etching enables us to fabricate nanometer-thick Ga-ion-doped amorphous Si membranes, which can be bent upward at arbitrary angle by controlling the FIB beam irradiation condition. The bending mechanism is discussed in the light of Ga ions implanted depth from the membrane surface. By using this technique, a micrometer-sized chute structure with several different angles is produced.This paper describes a plastic reshaping technique for Si thin membranes by using focused ion beam (FIB) processing. FIB is used to locally pattern and implant Ga ions into the membranes. The combination of Ga ion doping and alkali wet etching enables us to fabricate nanometer-thick Ga-ion-doped amorphous Si membranes, which can be bent upward at arbitrary angle by controlling the FIB beam irradiation condition. The bending mechanism is discussed in the light of Ga ions implanted depth from the membrane surface. By using this technique, a micrometer-sized chute structure with several different angles is produced.
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Journal Title
Japanese Journal of Applied Physics
Volume
55
Issue
6S1
Subject
Mathematical sciences
Physical sciences
Other physical sciences not elsewhere classified
Engineering