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  • Influence of gallium ion beam acceleration voltage on the bend angle of amorphous silicon cantilevers

    Author(s)
    Kozeki, Takahiro
    Hoang-Phuong, Phan
    Dzung, Viet Dao
    Inoue, Shozo
    Namazu, Takahiro
    Griffith University Author(s)
    Dao, Dzung V.
    Phan, Hoang Phuong
    Year published
    2016
    Metadata
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    Abstract
    This paper describes a plastic reshaping technique for Si thin membranes by using focused ion beam (FIB) processing. FIB is used to locally pattern and implant Ga ions into the membranes. The combination of Ga ion doping and alkali wet etching enables us to fabricate nanometer-thick Ga-ion-doped amorphous Si membranes, which can be bent upward at arbitrary angle by controlling the FIB beam irradiation condition. The bending mechanism is discussed in the light of Ga ions implanted depth from the membrane surface. By using this technique, a micrometer-sized chute structure with several different angles is produced.This paper describes a plastic reshaping technique for Si thin membranes by using focused ion beam (FIB) processing. FIB is used to locally pattern and implant Ga ions into the membranes. The combination of Ga ion doping and alkali wet etching enables us to fabricate nanometer-thick Ga-ion-doped amorphous Si membranes, which can be bent upward at arbitrary angle by controlling the FIB beam irradiation condition. The bending mechanism is discussed in the light of Ga ions implanted depth from the membrane surface. By using this technique, a micrometer-sized chute structure with several different angles is produced.
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    Journal Title
    Japanese Journal of Applied Physics
    Volume
    55
    Issue
    6S1
    DOI
    https://doi.org/10.7567/JJAP.55.06GL02
    Subject
    Mathematical sciences
    Physical sciences
    Other physical sciences not elsewhere classified
    Engineering
    Publication URI
    http://hdl.handle.net/10072/123665
    Collection
    • Journal articles

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