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dc.contributor.authorHaasmann, D
dc.contributor.authorMoghadam, HA
dc.contributor.authorHan, J
dc.contributor.authorAminbeidokhti, A
dc.contributor.authorIacopi, A
dc.contributor.authorDimitrijev, S
dc.date.accessioned2018-01-23T04:31:42Z
dc.date.available2018-01-23T04:31:42Z
dc.date.issued2016
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.858.453
dc.identifier.urihttp://hdl.handle.net/10072/123745
dc.description.abstractIn this paper, we present surprising MOS capacitor C–V bias instability observed in NO-grown oxides, with distinctly different behavior compared to that of conventional NO-annealed oxides on 4H-SiC. Using sequential back-and-forth and bias-temperature stress C–V measurements, it was demonstrated that the C–V shift direction of NO-grown oxides was opposite to that of NO-annealed oxides. A model based on bias-temperature stress orientated near-interfacial dipoles is proposed to explain this unique behavior of NO-grown oxides.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications
dc.relation.ispartofpagefrom453
dc.relation.ispartofpageto456
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume858
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchPhysical chemistry not elsewhere classified
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode340699
dc.subject.fieldofresearchcode4016
dc.titleDipole Type Behavior of NO Grown Oxides on 4H–SiC
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHaasmann, Daniel E.


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