dc.contributor.author | Haasmann, D | |
dc.contributor.author | Moghadam, HA | |
dc.contributor.author | Han, J | |
dc.contributor.author | Aminbeidokhti, A | |
dc.contributor.author | Iacopi, A | |
dc.contributor.author | Dimitrijev, S | |
dc.date.accessioned | 2018-01-23T04:31:42Z | |
dc.date.available | 2018-01-23T04:31:42Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 0255-5476 | |
dc.identifier.doi | 10.4028/www.scientific.net/MSF.858.453 | |
dc.identifier.uri | http://hdl.handle.net/10072/123745 | |
dc.description.abstract | In this paper, we present surprising MOS capacitor C–V bias instability observed in NO-grown oxides, with distinctly different behavior compared to that of conventional NO-annealed oxides on 4H-SiC. Using sequential back-and-forth and bias-temperature stress C–V measurements, it was demonstrated that the C–V shift direction of NO-grown oxides was opposite to that of NO-annealed oxides. A model based on bias-temperature stress orientated near-interfacial dipoles is proposed to explain this unique behavior of NO-grown oxides. | |
dc.description.peerreviewed | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Trans Tech Publications | |
dc.relation.ispartofpagefrom | 453 | |
dc.relation.ispartofpageto | 456 | |
dc.relation.ispartofjournal | Materials Science Forum | |
dc.relation.ispartofvolume | 858 | |
dc.subject.fieldofresearch | Physical chemistry | |
dc.subject.fieldofresearch | Physical chemistry not elsewhere classified | |
dc.subject.fieldofresearch | Materials engineering | |
dc.subject.fieldofresearchcode | 3406 | |
dc.subject.fieldofresearchcode | 340699 | |
dc.subject.fieldofresearchcode | 4016 | |
dc.title | Dipole Type Behavior of NO Grown Oxides on 4H–SiC | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.hasfulltext | No Full Text | |
gro.griffith.author | Dimitrijev, Sima | |
gro.griffith.author | Haasmann, Daniel E. | |