MEMS-based tunable meander inductor

Abstract

novel MEMS-based tunable meander inductor is reported. The inductor is fabricated using a single metal layer in a low-cost commercially available Metal-MUMPs™ process. The mutual inductance of the meander inductor is tuned by changing the gaps between the meander turns using a chevron-type thermal actuator. An air trench underneath the inductor has been made to reduce the loss in the silicon substrate and improve quality factor (Q-factor). Tuning range of ∼50.8% and maximum Q-factor of 8.17 have been achieved at 5.79 GHz by stretching the meander inductor for 22 µm. The total footprint of the device is 0.58 mm2.