Ti/Ni/Au contacts to n-SiC after low energy implantation
Author(s)
Leech, Patrick W
Holland, Anthony S
Reeves, Geoffrey K
Pan, Yue
Ridgway, Mark
Tanner, Phillip
Griffith University Author(s)
Year published
2016
Metadata
Show full item recordAbstract
The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10−6 Ω cm2. The value of ρc increased significantly at an implant dose of 1×1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10−6 Ω cm2. The value of ρc increased significantly at an implant dose of 1×1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.
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Journal Title
Materials Letters
Volume
166
Subject
Physical sciences
Chemical sciences
Engineering
Other engineering not elsewhere classified