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  • Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

    Author(s)
    Qamar, Afzaal
    Phan, H-P
    Dinh, Toan
    Wang, Li
    Dimitrijev, Sima
    Dao, Dzung Viet
    Griffith University Author(s)
    Dimitrijev, Sima
    Dao, Dzung V.
    Year published
    2016
    Metadata
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    Abstract
    This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition, and Hall devices were fabricated using the conventional photolithography and dry etching processes. An experimental setup capable of applying stress during Hall-effect measurements was designed to measure the piezo-Hall effect. The piezo-Hall effect is quantified by directly observing the variation in magnetic field sensitivity of the Hall devices upon an applied stress. The piezo-Hall coefficient P12 characterized by these ...
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    This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition, and Hall devices were fabricated using the conventional photolithography and dry etching processes. An experimental setup capable of applying stress during Hall-effect measurements was designed to measure the piezo-Hall effect. The piezo-Hall effect is quantified by directly observing the variation in magnetic field sensitivity of the Hall devices upon an applied stress. The piezo-Hall coefficient P12 characterized by these measurements is found to be 6.4 × 10−11 Pa−1.
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    Journal Title
    RSC Advances
    Volume
    6
    Issue
    37
    DOI
    https://doi.org/10.1039/c6ra04501d
    Subject
    Chemical sciences
    Microelectronics
    Publication URI
    http://hdl.handle.net/10072/142593
    Collection
    • Journal articles

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