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  • Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope

    Author(s)
    Dimitrijev, Sima
    Han, Jisheng
    Zou, Jin
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2006
    Metadata
    Show full item record
    Abstract
    High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface after oxidation in either NO or dry O2 ambients. This reopens the question of the origin of the electronically active defects at the SiO2-SiC interface, whose density remains orders of magnitude higher than in the SiO2-Si interface. Capacitance-transient measurements, analysed in this paper, demonstrate that the dominant electronically active defects are in the oxide at tunneling distances from the SiC surface (near-interface traps). The HR TEM results cannot rule out that these traps are related to carbon/oxygen bonds or even ...
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    High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface after oxidation in either NO or dry O2 ambients. This reopens the question of the origin of the electronically active defects at the SiO2-SiC interface, whose density remains orders of magnitude higher than in the SiO2-Si interface. Capacitance-transient measurements, analysed in this paper, demonstrate that the dominant electronically active defects are in the oxide at tunneling distances from the SiC surface (near-interface traps). The HR TEM results cannot rule out that these traps are related to carbon/oxygen bonds or even nanometer-sized carbon clusters, which resolves the apparent inconsistency with the earlier experimental evidence of carbon accumulation at (or near) the SiO2-SiC interface.
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    Journal Title
    Materials Science Forum
    Volume
    527-529
    Publisher URI
    http://www.scientific.net/0255-5476/
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.527-529.975
    Subject
    Physical chemistry
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/14378
    Collection
    • Journal articles

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