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  • Device Parameter Changes Caused by Manufacturing Fluctuations of Deep Submicron MOSFET's

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    1335.pdf (589.9Kb)
    Author(s)
    SITTE, R
    DIMITRIJEV, S
    HARRISON, HB
    Griffith University Author(s)
    Harrison, Barry B.
    Dimitrijev, Sima
    Year published
    1994
    Metadata
    Show full item record
    Journal Title
    IEEE Transactions on Electron Devices
    Volume
    41
    Issue
    11
    Publisher URI
    http://ieeexplore.ieee.org/Xplore/dynhome.jsp
    DOI
    https://doi.org/10.1109/16.333843
    Copyright Statement
    © 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
    Subject
    Agricultural, veterinary and food sciences
    Publication URI
    http://hdl.handle.net/10072/15742
    Collection
    • Journal articles

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