Device Parameter Changes Caused by Manufacturing Fluctuations of Deep Submicron MOSFET's

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Author(s)
SITTE, R
DIMITRIJEV, S
HARRISON, HB
Year published
1994
Metadata
Show full item recordJournal Title
IEEE Transactions on Electron Devices
Volume
41
Issue
11
Publisher URI
Copyright Statement
© 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Subject
Agricultural, veterinary and food sciences