Effects of Nitric Oxide Annealing of Thermally Grown Silicon Dioxide Characteristics
MetadataShow full item record
IEEE Electron Device Letters
© 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Electronics, sensors and digital hardware