Effects of Nitric Oxide Annealing of Thermally Grown Silicon Dioxide Characteristics

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Author(s)
YAO, ZQ
HARRISON, HB
DIMITRIJEV, S
YEOW, YT
Year published
1995
Metadata
Show full item recordJournal Title
IEEE Electron Device Letters
Volume
16
Issue
8
Publisher URI
Copyright Statement
© 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Subject
Environmental sciences