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dc.contributor.authorDing, Defang
dc.contributor.authorWang, Dawei
dc.contributor.authorZhao, Man
dc.contributor.authorLv, Jiawei
dc.contributor.authorJiang, Hong
dc.contributor.authorLu, Chenguang
dc.contributor.authorTang, Zhiyong
dc.date.accessioned2017-08-11T04:12:20Z
dc.date.available2017-08-11T04:12:20Z
dc.date.issued2017
dc.identifier.issn0935-9648
dc.identifier.doi10.1002/adma.201603444
dc.identifier.urihttp://hdl.handle.net/10072/172603
dc.description.abstractSolution-processed PbTe nanocrystal (NC) thin films are ligand exchanged by ethylenediamine and then annealed at 400 °C for enhancement of NC coupling. To further improve the performance, heterostructures are introduced into the PbTe/PbS films. Significantly, an optimized ZT of ≈0.30 is successfully achieved at 405 K. This method opens an avenue toward thermoelectric thin film devices with high performance.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherJohn Wiley & Sons
dc.relation.ispartofpagefrom1603444-1
dc.relation.ispartofpageto1603444-6
dc.relation.ispartofissue1
dc.relation.ispartofjournalAdvanced Materials
dc.relation.ispartofvolume29
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchChemical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchMaterials engineering not elsewhere classified
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode34
dc.subject.fieldofresearchcode40
dc.subject.fieldofresearchcode401699
dc.titleInterface Engineering in Solution-Processed Nanocrystal Thin Films for Improved Thermoelectric Performance
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorTang, Zhiyong


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