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  • Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics

    Author(s)
    Soares, GV
    Baumvol, IJR
    Hold, L
    Kong, F
    Han, J
    Dimitrijev, S
    Radtke, C
    Stedile, FC
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2007
    Metadata
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    Abstract
    Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film ...
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    Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.
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    Journal Title
    Applied Physics Letters
    Volume
    91
    DOI
    https://doi.org/10.1063/1.2763966
    Subject
    Physical sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/17619
    Collection
    • Journal articles

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