Comments on “Substrate-bias-dependent threshold-voltage model of short-channel MOSFET”
Author(s)
DIMITRIJEV, S
ZUPAC, D
STOJADINOVIC, D
Griffith University Author(s)
Year published
1995
Metadata
Show full item recordAbstract
The note(!], in which an expression for the threshold voltage of short-channel MOSFETs is derived, is in good part based on our letter[2], in which an expression for the drain current of short-channel MOSFETs is derived. The basic idea, the use of Gauss's law to determine the depletion-layer charge controlled by the gate voltage, is the same.The note(!], in which an expression for the threshold voltage of short-channel MOSFETs is derived, is in good part based on our letter[2], in which an expression for the drain current of short-channel MOSFETs is derived. The basic idea, the use of Gauss's law to determine the depletion-layer charge controlled by the gate voltage, is the same.
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Journal Title
Solid-state Electronics
Volume
38
Issue
1
Subject
Condensed matter physics
Atomic, molecular and optical physics
Environmental sciences