dc.contributor.author | DIMITRIJEV, S | |
dc.contributor.author | ZUPAC, D | |
dc.contributor.author | STOJADINOVIC, D | |
dc.date.accessioned | 2019-05-27T01:24:29Z | |
dc.date.available | 2019-05-27T01:24:29Z | |
dc.date.issued | 1995 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.doi | 10.1016/0038-1101(94)00151-5 | |
dc.identifier.uri | http://hdl.handle.net/10072/177351 | |
dc.description.abstract | The note(!], in which an expression for the threshold voltage of short-channel MOSFETs is derived, is in good part based on our letter[2], in which an expression for the drain current of short-channel MOSFETs is derived. The basic idea, the use of Gauss's law to determine the depletion-layer charge controlled by the gate voltage, is the same. | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Elsevier Science | |
dc.publisher.place | UK | |
dc.relation.ispartofpagefrom | 267 | |
dc.relation.ispartofpageto | 267 | |
dc.relation.ispartofissue | 1 | |
dc.relation.ispartofjournal | Solid-state Electronics | |
dc.relation.ispartofvolume | 38 | |
dc.subject.fieldofresearch | Condensed matter physics | |
dc.subject.fieldofresearch | Atomic, molecular and optical physics | |
dc.subject.fieldofresearch | Environmental sciences | |
dc.subject.fieldofresearchcode | 5104 | |
dc.subject.fieldofresearchcode | 5102 | |
dc.subject.fieldofresearchcode | 41 | |
dc.title | Comments on “Substrate-bias-dependent threshold-voltage model of short-channel MOSFET” | |
dc.type | Journal article | |
dc.type.description | C3 - Articles (Letter/ Note) | |
dc.type.code | C - Journal Articles | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.hasfulltext | No Full Text | |
gro.griffith.author | Dimitrijev, Sima | |