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dc.contributor.authorDIMITRIJEV, S
dc.contributor.authorZUPAC, D
dc.contributor.authorSTOJADINOVIC, D
dc.date.accessioned2019-05-27T01:24:29Z
dc.date.available2019-05-27T01:24:29Z
dc.date.issued1995
dc.identifier.issn0038-1101
dc.identifier.doi10.1016/0038-1101(94)00151-5
dc.identifier.urihttp://hdl.handle.net/10072/177351
dc.description.abstractThe note(!], in which an expression for the threshold voltage of short-channel MOSFETs is derived, is in good part based on our letter[2], in which an expression for the drain current of short-channel MOSFETs is derived. The basic idea, the use of Gauss's law to determine the depletion-layer charge controlled by the gate voltage, is the same.
dc.languageEnglish
dc.language.isoeng
dc.publisherElsevier Science
dc.publisher.placeUK
dc.relation.ispartofpagefrom267
dc.relation.ispartofpageto267
dc.relation.ispartofissue1
dc.relation.ispartofjournalSolid-state Electronics
dc.relation.ispartofvolume38
dc.subject.fieldofresearchCondensed matter physics
dc.subject.fieldofresearchAtomic, molecular and optical physics
dc.subject.fieldofresearchEnvironmental sciences
dc.subject.fieldofresearchcode5104
dc.subject.fieldofresearchcode5102
dc.subject.fieldofresearchcode41
dc.titleComments on “Substrate-bias-dependent threshold-voltage model of short-channel MOSFET”
dc.typeJournal article
dc.type.descriptionC3 - Articles (Letter/ Note)
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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