Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiC
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This paper presents results of the physical characterization of NO nitrided SiC/SiO2 interfaces by XPS analysis. The results show different interface chemistries between NO nitrided and Ar annealed SiC/SiO2 interfaces. After NO nitridation, N builds up at the SiC/SiO2 interface forming Si=N bonds. The NO nitrided SiC/SiO2 interface is free of the complex interface oxide/carbon compounds which are suggested to be the reason for the inferiority of the SiC/SiO2 interface compared to the Si/SiO 2 interface.
21st International Conference on Microelectronics, Proceedings
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