Relaxation of Acceptance Limits (RAL): A Global Approach for Parametric Yield Control of 0.1μm Deep Submicron MOSFET Devices

SITTE, R; DIMITRIJEV, S; HARRISON, HB

doi:10.1109/66.406891

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Author(s)

SITTE, R

DIMITRIJEV, S

HARRISON, HB

Griffith University Author(s)

Harrison, Barry B.

Dimitrijev, Sima

Year published

1995

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Abstract

An alternative method to fixed quality acceptance limits for in-line yield control is proposed. Our study is based on a sensitivity analysis, which has revealed that conventional parametric yield-control techniques using fixed in-line acceptance (tolerance) limits, as traditionally used in semiconductor manufacturing, are not efficient in deep submicron-size devices.An alternative method to fixed quality acceptance limits for in-line yield control is proposed. Our study is based on a sensitivity analysis, which has revealed that conventional parametric yield-control techniques using fixed in-line acceptance (tolerance) limits, as traditionally used in semiconductor manufacturing, are not efficient in deep submicron-size devices.
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Journal Title

IEEE Transactions on Semiconductor Manufacturing

Volume

Issue

DOI

https://doi.org/10.1109/66.406891

Copyright Statement

© 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Subject

Manufacturing engineering

Publication URI

http://hdl.handle.net/10072/19903

Collection

Journal articles