Relaxation of Acceptance Limits (RAL): A Global Approach for Parametric Yield Control of 0.1μm Deep Submicron MOSFET Devices
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An alternative method to fixed quality acceptance limits for in-line yield control is proposed. Our study is based on a sensitivity analysis, which has revealed that conventional parametric yield-control techniques using fixed in-line acceptance (tolerance) limits, as traditionally used in semiconductor manufacturing, are not efficient in deep submicron-size devices.
IEEE Transactions on Semiconductor Manufacturing
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