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Relaxation of Acceptance Limits (RAL): A Global Approach for Parametric Yield Control of 0.1μm Deep Submicron MOSFET Devices

dc.contributor.authorSITTE, R
dc.contributor.authorDIMITRIJEV, S
dc.contributor.authorHARRISON, HB
dc.date.accessioned2017-05-03T13:34:46Z
dc.date.available2017-05-03T13:34:46Z
dc.date.issued1995
dc.date.modified2008-08-21T23:45:42Z
dc.identifier.issn0894-6507
dc.identifier.doi10.1109/66.406891
dc.identifier.urihttp://hdl.handle.net/10072/19903
dc.description.abstractAn alternative method to fixed quality acceptance limits for in-line yield control is proposed. Our study is based on a sensitivity analysis, which has revealed that conventional parametric yield-control techniques using fixed in-line acceptance (tolerance) limits, as traditionally used in semiconductor manufacturing, are not efficient in deep submicron-size devices.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent544276 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.publisher.placeUSA
dc.relation.ispartofpagefrom374
dc.relation.ispartofpageto377
dc.relation.ispartofissue3
dc.relation.ispartofjournalIEEE Transactions on Semiconductor Manufacturing
dc.relation.ispartofvolume8
dc.subject.fieldofresearchManufacturing engineering
dc.subject.fieldofresearchcode4014
dc.titleRelaxation of Acceptance Limits (RAL): A Global Approach for Parametric Yield Control of 0.1μm Deep Submicron MOSFET Devices
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Information and Communication Technology
gro.rights.copyright© 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
gro.date.issued1995
gro.hasfulltextFull Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima


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