The Electrical Properties of Sub-5 nm Oxynitride Dielectrics Prepared in a Nitric Oxide Ambient Using Rapid Thermal Processing
MetadataShow full item record
Ultrathin (<5 nm) dielectric films have been grown on (100) silicon wing rapid thermal Processing (RTp) in a ping properties, and interface state generation during Fowlerelectron injection have been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of a much stronger and large number of Si-N bonds in both the bulk of the dielectric films and at the Si-Si02 interface region. The leakage currents are at least three orders of magnitude lower than other reported results for similar thicknesses. The dielectric films grown in NO ambient are viewed as promising technology for ultrathin dielectrics.
IEEE Electron Device Letters
© 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
AGRICULTURAL AND VETERINARY SCIENCES