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dc.contributor.authorYAO, ZQ
dc.contributor.authorHARRISON, HB
dc.contributor.authorDIMITRIJEV, S
dc.contributor.authorYEOW, YT
dc.date.accessioned2017-05-03T13:45:11Z
dc.date.available2017-05-03T13:45:11Z
dc.date.issued1994
dc.date.modified2008-08-25T03:18:33Z
dc.identifier.issn0741-3106
dc.identifier.doi10.1109/55.338422
dc.identifier.urihttp://hdl.handle.net/10072/19921
dc.description.abstractUltrathin (<5 nm) dielectric films have been grown on (100) silicon wing rapid thermal Processing (RTp) in a ping properties, and interface state generation during Fowlerelectron injection have been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of a much stronger and large number of Si-N bonds in both the bulk of the dielectric films and at the Si-Si02 interface region. The leakage currents are at least three orders of magnitude lower than other reported results for similar thicknesses. The dielectric films grown in NO ambient are viewed as promising technology for ultrathin dielectrics.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent338543 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.publisher.placeUSA
dc.relation.ispartofpagefrom516
dc.relation.ispartofpageto518
dc.relation.ispartofjournalIEEE Electron Device Letters
dc.relation.ispartofvolume15
dc.subject.fieldofresearchAgricultural, veterinary and food sciences
dc.subject.fieldofresearchElectronics, sensors and digital hardware
dc.subject.fieldofresearchcode30
dc.subject.fieldofresearchcode4009
dc.titleThe Electrical Properties of Sub-5 nm Oxynitride Dielectrics Prepared in a Nitric Oxide Ambient Using Rapid Thermal Processing
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
gro.date.issued1994
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHarrison, Barry B.


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