Effects of Processing Fluctuations on a 0.1µ MOSFET
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Fluctuations in the processing parameters can lead to a separation between the gate and the sourceldrain extensions in MOSFETs. A O.l堍OSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than avalanche breakdown.
1995 IEEE TENCON IEEE Region 10 International Conference on Microelectronics and VLSI
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