Spin transport and spin current detection in semiconductors
Author(s)
Miah, M Idrish
Gray, E MacA
Griffith University Author(s)
Year published
2008
Metadata
Show full item recordAbstract
We consider a semiconductor device similar to the subject of recent experiments on the spin-dependent Hall effect and analyse electric field effects in spin transport. A drift-diffusion equation for spin density is derived, and drift and diffusion contributions to the spin current are examined, which importantly suggests a possible way for the enhancement of spin current by using a semiconductor degenerate regime. By referring to the experimental detection technique, an expression for the transverse Hall field arising from the spin current is derived, whose exponential dependence on distance at electric fields near Esimilar, ...
View more >We consider a semiconductor device similar to the subject of recent experiments on the spin-dependent Hall effect and analyse electric field effects in spin transport. A drift-diffusion equation for spin density is derived, and drift and diffusion contributions to the spin current are examined, which importantly suggests a possible way for the enhancement of spin current by using a semiconductor degenerate regime. By referring to the experimental detection technique, an expression for the transverse Hall field arising from the spin current is derived, whose exponential dependence on distance at electric fields near Esimilar, equalsEco can also be used as a convenient and useful tool to determine the spin diffusion length of a semiconductor. The results are discussed and are compared with published experimental data.
View less >
View more >We consider a semiconductor device similar to the subject of recent experiments on the spin-dependent Hall effect and analyse electric field effects in spin transport. A drift-diffusion equation for spin density is derived, and drift and diffusion contributions to the spin current are examined, which importantly suggests a possible way for the enhancement of spin current by using a semiconductor degenerate regime. By referring to the experimental detection technique, an expression for the transverse Hall field arising from the spin current is derived, whose exponential dependence on distance at electric fields near Esimilar, equalsEco can also be used as a convenient and useful tool to determine the spin diffusion length of a semiconductor. The results are discussed and are compared with published experimental data.
View less >
Journal Title
Solid State Sciences
Volume
10
Issue
2
Subject
Condensed matter physics
Inorganic chemistry
Macromolecular and materials chemistry