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dc.contributor.authorJung, HK
dc.contributor.authorDimitrijev, S
dc.date.accessioned2019-02-27T00:42:54Z
dc.date.available2019-02-27T00:42:54Z
dc.date.issued2016
dc.identifier.issn2088-8708
dc.identifier.doi10.11591/ijece.v6i6.13265
dc.identifier.urihttp://hdl.handle.net/10072/204550
dc.description.abstractThis paper analyzes the subthreshold swing in asymmetric double gate MOSFETs with sub-20 nm channel lengths. The analysis of the carrier transport in the subthreshold region of these nano scaled MOSFET includes tunneling as an important additional mechanism to the thermionic emission. It is found that the subthreshold swing is increasing due to tunneling current and that the performance of nano scaled MOSFETs is degraded. The degradation of the subthreshold swing due to tunneling is quantified using analytical potential distribution and Wentzel–Kramers–Brillouin (WKB) approximation in this paper. This analytical approach is verified by two dimensional simulations. It is shown that the degradation of subthreshold swing increases with both reduction of channel length and increase of channel thickness. We also show that the subthreshold swing is increasing in case of different top and bottom gate oxide thicknesses.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Advanced Engineering and Science (I A E S)
dc.relation.ispartofpagefrom2730
dc.relation.ispartofpageto2734
dc.relation.ispartofissue6
dc.relation.ispartofjournalInternational Journal of Electrical and Computer Engineering (IJECE)
dc.relation.ispartofvolume6
dc.subject.fieldofresearchElectronics, sensors and digital hardware not elsewhere classified
dc.subject.fieldofresearchcode400999
dc.titleThe Impact of Tunneling on the Subthreshold Swing in Sub-20 nm Asymmetric Double Gate MOSFETs
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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