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dc.contributor.authorde Oliveira, M.
dc.contributor.authorSun, He
dc.date.accessioned2017-05-03T14:59:10Z
dc.date.available2017-05-03T14:59:10Z
dc.date.issued2004
dc.date.modified2009-02-26T07:57:43Z
dc.identifier.issn10980121
dc.identifier.doi10.1103/PhysRevB.69.085322
dc.identifier.urihttp://hdl.handle.net/10072/21468
dc.description.abstractWe investigate the emission of multimodal polarized light from light emitting devices due to spin-aligned carrier injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as nonradiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g factor and magnetic field affect the degree of polarization of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring the degree of spin polarization of carrier injection into nonmagnetic semicondutors.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.publisher.placeRidge, NY
dc.relation.ispartofpagefrom085322-1
dc.relation.ispartofpageto085322-11
dc.relation.ispartofissue8
dc.relation.ispartofjournalPhysical Review B: Condensed Matter and Materials Physics
dc.relation.ispartofvolume69
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchChemical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode03
dc.subject.fieldofresearchcode09
dc.titleModeling of optical detection of spin-polarized carrier injection into light-emitting devices
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.date.issued2004
gro.hasfulltextNo Full Text
gro.griffith.authorSun, He-Bi


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