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  • Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions

    Author(s)
    Yang, J.
    J Kong, F.
    Griffith University Author(s)
    Kong, Frederick CJ.
    Year published
    2002
    Metadata
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    Abstract
    A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p-n junctions is presented. In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out and a parallel shift of the capacitance-voltage characteristics in the depletion and neutral regions of p-n junctions, respectively. This explains the discrepancy between the SCM measurement and simulation near p-n junctions, and thus modeling interface ...
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    A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p-n junctions is presented. In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out and a parallel shift of the capacitance-voltage characteristics in the depletion and neutral regions of p-n junctions, respectively. This explains the discrepancy between the SCM measurement and simulation near p-n junctions, and thus modeling interface states is crucial for SCM dopant profiling of p-n junctions.
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    Journal Title
    Applied Physics Letters
    Volume
    81
    Issue
    26
    DOI
    https://doi.org/10.1063/1.1532547
    Subject
    Physical Sciences
    Engineering
    Technology
    Publication URI
    http://hdl.handle.net/10072/21762
    Collection
    • Journal articles

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