Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs
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Author(s)
J Kong, F.
Yeow, Y.
Domyo, H.
Griffith University Author(s)
Year published
2003
Metadata
Show full item recordAbstract
The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.
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Journal Title
Electronics Letters
Volume
39
Issue
4
Copyright Statement
© 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Subject
Artificial Intelligence and Image Processing
Electrical and Electronic Engineering
Communications Technologies