dc.contributor.convenor | Prof. Dr. N. Stojadinovic | |
dc.contributor.author | Kong, F | |
dc.contributor.author | Tanner, P | |
dc.contributor.author | Hold, L | |
dc.contributor.author | Han, J | |
dc.contributor.author | Dimitrijev, S | |
dc.date.accessioned | 2017-05-03T15:10:20Z | |
dc.date.available | 2017-05-03T15:10:20Z | |
dc.date.issued | 2006 | |
dc.date.modified | 2009-09-16T07:42:44Z | |
dc.identifier.isbn | 9781424401178 | |
dc.identifier.issn | 2159-1660 | |
dc.identifier.refuri | http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=34620&isYear=2006 | |
dc.identifier.doi | 10.1109/ICMEL.2006.1651017 | |
dc.identifier.uri | http://hdl.handle.net/10072/22854 | |
dc.description.abstract | This paper demonstrates the extraction of MOS capacitor minority carrier generation lifetime and surface generation velocity from the measurement of deep-depletion capacitance transient. It is shown that the bulk generation lifetime, the lateral surface generation, and the surface generation under the gate can be separately determined by measuring test structures with different perimeter-to-area ratios. | |
dc.description.peerreviewed | Yes | |
dc.description.publicationstatus | Yes | |
dc.format.extent | 208089 bytes | |
dc.format.mimetype | application/pdf | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | IEEE | |
dc.publisher.place | USA | |
dc.publisher.uri | http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=34620&isYear=2006 | |
dc.relation.ispartofstudentpublication | N | |
dc.relation.ispartofconferencename | 25th International Conference on Microelectronics | |
dc.relation.ispartofconferencetitle | 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | |
dc.relation.ispartofdatefrom | 2006-05-14 | |
dc.relation.ispartofdateto | 2006-05-17 | |
dc.relation.ispartoflocation | Belgrade, SERBIA MONTENEG | |
dc.relation.ispartofpagefrom | 557 | |
dc.relation.ispartofpagefrom | 2 pages | |
dc.relation.ispartofpageto | + | |
dc.relation.ispartofpageto | 2 pages | |
dc.rights.retention | Y | |
dc.subject.fieldofresearchcode | 290901 | |
dc.title | Analysis of surface generation mechanisms in MOS capacitors | |
dc.type | Conference output | |
dc.type.description | E1 - Conferences | |
dc.type.code | E - Conference Publications | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.rights.copyright | © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | |
gro.date.issued | 2006 | |
gro.hasfulltext | Full Text | |
gro.griffith.author | Dimitrijev, Sima | |
gro.griffith.author | Tanner, Philip G. | |