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dc.contributor.authorHan, Jisheng
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorKong, Fred
dc.contributor.authorTanner, Philip
dc.contributor.authorAtanacio, Armand
dc.contributor.editorLorenzo Faraone
dc.date.accessioned2017-05-03T15:10:21Z
dc.date.available2017-05-03T15:10:21Z
dc.date.issued2008
dc.date.modified2009-05-12T06:39:57Z
dc.identifier.isbn978-1-4244-2716-1
dc.identifier.refurihttp://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4802062&isYear=2008
dc.identifier.doi10.1109/COMMAD.2008.4802082
dc.identifier.urihttp://hdl.handle.net/10072/22890
dc.description.abstractIn this paper, we present and analyse Secondary Ion Mass Spectrometry (SIMS) measurements of oxygen concentration in 3C SiC epitaxial layers on Si. The concentration of oxygen determined by SIMS was as high as 1019 to 1020 atom/cm3. Unlike silicon, oxygen can act as donor atoms in SiC with calculated ionization levels of 200 meV [1]. It is generally believed that the main contribution of dopant concentration in the unintentionally doped SiC film is related to background nitrogen. Because of the high ionisation level, oxygen is not electrically active at room temperature. By measuring the conductivity of the films at higher temperatures, we extracted three donor energy levels: EA1 =79 meV, EA2 = 180 meV, and EA3 = 350 meV. The activation energy of 180 meV could be associated with the calculated ionization level for oxygen. Further analysis of the conductivity measurements at elevated temperatures will be performed to determine the electrically active donor concentration that is associated with the activation energy of 180 meV.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent249649 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherIEEE
dc.publisher.placeOnline
dc.publisher.urihttp://ieeexplore.ieee.org/servlet/opac?punumber=4799764
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofconferencenameConference on Optoelectronic and Microelectronic Materials and Devices
dc.relation.ispartofconferencetitleCOMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
dc.relation.ispartofdatefrom2008-07-28
dc.relation.ispartofdateto2008-09-01
dc.relation.ispartoflocationSydney, AUSTRALIA
dc.relation.ispartofpagefrom20
dc.relation.ispartofpagefrom2 pages
dc.relation.ispartofpageto+
dc.relation.ispartofpageto2 pages
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchcode400908
dc.titleSIMS investigation of Oxygen in 3C-SiC on Si
dc.typeConference output
dc.type.descriptionE1 - Conferences
dc.type.codeE - Conference Publications
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
gro.date.issued2008
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHan, Jisheng
gro.griffith.authorTanner, Philip G.
gro.griffith.authorKong, Frederick CJ.


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