Spin transport in the degenerate and diffusion regimes
Author(s)
Miah, M Idrish
Griffith University Author(s)
Year published
2008
Metadata
Show full item recordAbstract
Spin transport in semiconductors in the degenerate (DG) and diffusion regimes is investigated. We analyze semiconductor DG and nondegenerate regimes and study optically polarized spin transport in GaAs under a weak bias. The results obtained in the spin transport experiments show that the effect resulting from the spin current in GaAs increases in the DG regime, in consistence with the theoretical investigation based on the generalized Einstein relation. The effect is found to be increased with decreasing temperature or increasing doping density. The results are also discussed based on a spin drift-diffusion model. 頲008 ...
View more >Spin transport in semiconductors in the degenerate (DG) and diffusion regimes is investigated. We analyze semiconductor DG and nondegenerate regimes and study optically polarized spin transport in GaAs under a weak bias. The results obtained in the spin transport experiments show that the effect resulting from the spin current in GaAs increases in the DG regime, in consistence with the theoretical investigation based on the generalized Einstein relation. The effect is found to be increased with decreasing temperature or increasing doping density. The results are also discussed based on a spin drift-diffusion model. 頲008 American Institute of Physics.
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View more >Spin transport in semiconductors in the degenerate (DG) and diffusion regimes is investigated. We analyze semiconductor DG and nondegenerate regimes and study optically polarized spin transport in GaAs under a weak bias. The results obtained in the spin transport experiments show that the effect resulting from the spin current in GaAs increases in the DG regime, in consistence with the theoretical investigation based on the generalized Einstein relation. The effect is found to be increased with decreasing temperature or increasing doping density. The results are also discussed based on a spin drift-diffusion model. 頲008 American Institute of Physics.
View less >
Journal Title
Journal of Applied Physics
Volume
103
Issue
12
Subject
Mathematical sciences
Physical sciences
Engineering