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  • Spin transport in the degenerate and diffusion regimes

    Author(s)
    Miah, M Idrish
    Griffith University Author(s)
    Miah, Mohammad I.
    Year published
    2008
    Metadata
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    Abstract
    Spin transport in semiconductors in the degenerate (DG) and diffusion regimes is investigated. We analyze semiconductor DG and nondegenerate regimes and study optically polarized spin transport in GaAs under a weak bias. The results obtained in the spin transport experiments show that the effect resulting from the spin current in GaAs increases in the DG regime, in consistence with the theoretical investigation based on the generalized Einstein relation. The effect is found to be increased with decreasing temperature or increasing doping density. The results are also discussed based on a spin drift-diffusion model. 頲008 ...
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    Spin transport in semiconductors in the degenerate (DG) and diffusion regimes is investigated. We analyze semiconductor DG and nondegenerate regimes and study optically polarized spin transport in GaAs under a weak bias. The results obtained in the spin transport experiments show that the effect resulting from the spin current in GaAs increases in the DG regime, in consistence with the theoretical investigation based on the generalized Einstein relation. The effect is found to be increased with decreasing temperature or increasing doping density. The results are also discussed based on a spin drift-diffusion model. 頲008 American Institute of Physics.
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    Journal Title
    Journal of Applied Physics
    Volume
    103
    Issue
    12
    DOI
    https://doi.org/10.1063/1.2940364
    Subject
    Mathematical sciences
    Physical sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/23465
    Collection
    • Journal articles

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