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dc.contributor.authorMiah, M Idrish
dc.contributor.editorJames P Viccaro
dc.date.accessioned2017-05-03T16:56:33Z
dc.date.available2017-05-03T16:56:33Z
dc.date.issued2008
dc.date.modified2011-11-02T07:15:52Z
dc.identifier.issn0021-8979
dc.identifier.doi10.1063/1.2940364
dc.identifier.urihttp://hdl.handle.net/10072/23465
dc.description.abstractSpin transport in semiconductors in the degenerate (DG) and diffusion regimes is investigated. We analyze semiconductor DG and nondegenerate regimes and study optically polarized spin transport in GaAs under a weak bias. The results obtained in the spin transport experiments show that the effect resulting from the spin current in GaAs increases in the DG regime, in consistence with the theoretical investigation based on the generalized Einstein relation. The effect is found to be increased with decreasing temperature or increasing doping density. The results are also discussed based on a spin drift-diffusion model. 頲008 American Institute of Physics.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom123711-1
dc.relation.ispartofpageto123711-6
dc.relation.ispartofissue12
dc.relation.ispartofjournalJournal of Applied Physics
dc.relation.ispartofvolume103
dc.rights.retentionY
dc.subject.fieldofresearchMathematical sciences
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode49
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode40
dc.titleSpin transport in the degenerate and diffusion regimes
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Natural Sciences
gro.date.issued2008
gro.hasfulltextNo Full Text
gro.griffith.authorMiah, Mohammad I.


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