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  • Spin-drift transport in semiconductors

    Author(s)
    Miah, M Idrish
    Griffith University Author(s)
    Miah, Mohammad I.
    Year published
    2008
    Metadata
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    Abstract
    We present a study on spin transport in semiconductors under applied electric fields. Our experiments detect photoinjected electron spins and their relaxation during drift transport in intrinsic and moderately n-doped GaAs, based on the extraordinary Hall (eH) effect. For relatively low electric field (E), the optically spin-induced eH effect in n-doped GaAs is found to be enhanced with increasing doping density and not to depend much on E, indicating that a substantial amount of optical spin polarization is preserved during the drift transport in these extrinsic semiconductors. However, when the spin-oriented electrons are ...
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    We present a study on spin transport in semiconductors under applied electric fields. Our experiments detect photoinjected electron spins and their relaxation during drift transport in intrinsic and moderately n-doped GaAs, based on the extraordinary Hall (eH) effect. For relatively low electric field (E), the optically spin-induced eH effect in n-doped GaAs is found to be enhanced with increasing doping density and not to depend much on E, indicating that a substantial amount of optical spin polarization is preserved during the drift transport in these extrinsic semiconductors. However, when the spin-oriented electrons are injected with a high E, a very significant decrease is observed in the eH voltage (VeH) due to an increase in the spin precession frequency of the hot electrons. Spin relaxation by the D'yakonov-Perel' mechanism is calculated, and is suggested to be the reason for such a rapid spin relaxation for hot electrons under a high E. However, in an intrinsic GaAs (i-GaAs), a much weaker VeH is observed and, as the electron spins scattered by holes due to the Coulomb interaction in i-GaAs, the spin relaxation by the Bir-Aronov-Pikus mechanism is considered. Skew scattering and side jump as possible mechanisms of the optically spin-induced transverse Hall currents are discussed. Based on a spin drift-diffusion model, drift and diffusion contributions to the VeH are examined. The results are also discussed in comparison with theoretical investigations. 頲008 IOP Publishing Ltd.
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    Journal Title
    Journal of Physics D: Applied Physics
    Volume
    41
    Issue
    3
    DOI
    https://doi.org/10.1088/0022-3727/41/3/035105
    Subject
    Physical sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/23466
    Collection
    • Journal articles

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