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dc.contributor.authorMiah, M Idrish
dc.contributor.editorJames P Viccaro
dc.date.accessioned2017-05-03T16:56:34Z
dc.date.available2017-05-03T16:56:34Z
dc.date.issued2008
dc.date.modified2009-10-21T05:36:53Z
dc.identifier.issn0021-8979
dc.identifier.doi10.1063/1.2898408
dc.identifier.urihttp://hdl.handle.net/10072/23467
dc.description.abstractWe study the propagation of electron spin density polarization and spin currents in n -doped semiconductors within the two-component drift-diffusion model in an applied electric field (E). The drift and diffusion contributions to the spin currents are examined, which shows how the spin current could be enhanced. We find that there is a crossover field (Ex), where the drift and diffusion contribute equally to the spin current in the downstream direction. This suggests a possible way to identify whether the process for a given E would be in the drift or diffusion regime. We derive the expression for Ex and show that the intrinsic spin diffusion length in a semiconductor can be calculated directly from Ex. The results will be useful in obtaining transport properties of the carriers' spin in semiconductors. This investigation, however, highlights the need for further experiments to be conducted to measure Ex in semiconductors. 頲008 American Institute of Physics.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.publisher.placeUnited States
dc.publisher.urihttp://jap.aip.org/
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom063718-1
dc.relation.ispartofpageto063718-4
dc.relation.ispartofissue6
dc.relation.ispartofjournalJournal of Applied Physics
dc.relation.ispartofvolume103
dc.rights.retentionY
dc.subject.fieldofresearchAtomic, Molecular, Nuclear, Particle and Plasma Physics not elsewhere classified
dc.subject.fieldofresearchMathematical Sciences
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode020299
dc.subject.fieldofresearchcode01
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.titleDrift-diffusion crossover and the intrinsic spin diffusion lengths in semiconductors
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Natural Sciences
gro.date.issued2008
gro.hasfulltextNo Full Text
gro.griffith.authorMiah, Mohammad I.


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