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dc.contributor.authorMiah, Mohammaden_US
dc.contributor.editorJames P Viccaroen_US
dc.date.accessioned2017-04-24T14:52:31Z
dc.date.available2017-04-24T14:52:31Z
dc.date.issued2008en_US
dc.date.modified2009-10-21T05:36:53Z
dc.identifier.issn00218979en_US
dc.identifier.doi10.1063/1.2898408en_AU
dc.identifier.urihttp://hdl.handle.net/10072/23467
dc.description.abstractWe study the propagation of electron spin density polarization and spin currents in n -doped semiconductors within the two-component drift-diffusion model in an applied electric field (E). The drift and diffusion contributions to the spin currents are examined, which shows how the spin current could be enhanced. We find that there is a crossover field (Ex), where the drift and diffusion contribute equally to the spin current in the downstream direction. This suggests a possible way to identify whether the process for a given E would be in the drift or diffusion regime. We derive the expression for Ex and show that the intrinsic spin diffusion length in a semiconductor can be calculated directly from Ex. The results will be useful in obtaining transport properties of the carriers' spin in semiconductors. This investigation, however, highlights the need for further experiments to be conducted to measure Ex in semiconductors. 頲008 American Institute of Physics.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherAmerican Institute of Physicsen_US
dc.publisher.placeUnited Statesen_US
dc.publisher.urihttp://jap.aip.org/en_AU
dc.relation.ispartofstudentpublicationNen_AU
dc.relation.ispartofpagefrom063718-1en_US
dc.relation.ispartofpageto063718-4en_US
dc.relation.ispartofissue6en_US
dc.relation.ispartofjournalJournal of Applied Physicsen_US
dc.relation.ispartofvolume103en_US
dc.rights.retentionYen_AU
dc.subject.fieldofresearchAtomic, Molecular, Nuclear, Particle and Plasma Physics not elsewhere classifieden_US
dc.subject.fieldofresearchcode020299en_US
dc.titleDrift-diffusion crossover and the intrinsic spin diffusion lengths in semiconductorsen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyGriffith Sciences, School of Natural Sciencesen_US
gro.date.issued2008
gro.hasfulltextNo Full Text


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